FTCS 18 : the eighteenth symposium on fault-tolerant computing : digest of papers, June 27-30, 1988, TokyoDigest of papers - International Symposium on Fault-Tolerant Computing. 1988, issn 0731-3071, isbn 0-8186-8867-X, XXVI-388 p, isbn 0-8186-8867-XConference Proceedings

PESC'88 : 19th annual IEEE power electronics specialists conference, Kyoto, April 11-14, 1988PESC record. 1988, issn 0275-9306, 2Vol, XIX-1363 pConference Proceedings

International symposium on information theory, Kobe, June 19-24, 1988International symposium on information theory. 1988, XXII-264 pConference Proceedings

National convention of the Institute of Electronics, Information and Communication Engineers, Keio University, 26th.-20th. March 1987IKOMA, T.Transactions of the Institute of Electronics and Communication Engineers of Japan. Section E. 1987, Vol 70, Num 4, pp 221-372, issn 0387-236XConference Proceedings

Information theory and its applications: revised version of original papers, Beppu, Oita, 7-10 December 1988Transactions of the Institute of electronics, information and communication engineers. 1985, Vol 72, Num 5, issn 0913-574XConference Proceedings

Better understanding of earth environment (Tokyo, August 18-21, 1993)Fujimura, Sadao.IGARSS 93 : international geoscience and remote sensing symposium. 1993, isbn 0-7803-1241-4, 4Vol, VIII, 2160 p, isbn 0-7803-1241-4Conference Proceedings

1991 symposium on VLSI technology (digest of technical papers, May 28-30, 1991, Oiso)Symposium on VLSI technology. 1991, isbn 0-7803-0095-5, 2Vol, XV, 119 ; XIII, 137 p, isbn 0-7803-0095-5Conference Proceedings

Electronic information display materials. Problems regarding high-definition full-color displays, November 4, 1987, Kumamoto, JapanUEKI, A; KOBAYASHI, S.Transactions of the Institute of Electronics and Communication Engineers of Japan. Section E. 1988, Vol 71, Num 11, issn 0387-236X, 1046-1085 [40 p.]Conference Proceedings

INTELEC 91 : thirteenth international telecommunications energy conference, November 5-8, 1991, KyotoInternational telecommunications energy conference. 1991, isbn 0-87942-670-5, XVI, 734 p, isbn 0-87942-670-5Conference Proceedings

Algorithms, August 16-18, 1990, Tokyo, JapanASANO, Tetsuo; IBARAKI, Toshihide; IMAI, Miroshi et al.Lecture notes in computer science. 1990, Vol 450, issn 0302-9743, 486 p.Conference Proceedings

Extended abstracts of the 22nd (1990 international) conference on solid state devices and materials, August 22-24, 1990, SendaiInternational conference on solid state devices and materials. 1990, 1247 p., isbn 4-930813-41-7Conference Proceedings

Ab initio molecular orbital study of water absorption and hydrolysis of chemical vapor deposited SiOF films INAKASAKI, Y; MIYAJIMA, I; KATSUMATA, R et al.Japanese journal of applied physics. 1997, Vol 36, Num 4B, pp 2533-2544, issn 0021-4922, 1Conference Paper

Mechanism of AlCu film corrosionSIOZAWA, K.-I; FUJIWARA, N; MIYATAKE, H et al.Japanese journal of applied physics. 1997, Vol 36, Num 4B, pp 2496-2501, issn 0021-4922, 1Conference Paper

Oscillating chemical instabilities in contact etching diagnosed by optical emissionMCNEVIN, S. C.Japanese journal of applied physics. 1997, Vol 36, Num 4B, pp 2464-2469, issn 0021-4922, 1Conference Paper

Mechanism for CF polymer film deposition through deep SiO₂ holes in electron cyclotron resonance plasmaONO, T; HAMASAKI, R; MIZUTANI, T et al.Japanese journal of applied physics. 1996, Vol 35, Num 4B, pp 2468-2471, issn 0021-4922, 1Conference Paper

Pulsed plasma processing for reduction of profile distortion induced by charge buildup in electron cyclotron resonance plasmaFUJIWARA, N; MARUYAMA, T; YONEDA, M et al.Japanese journal of applied physics. 1996, Vol 35, Num 4B, pp 2450-2455, issn 0021-4922, 1Conference Paper

Atomic force microscope observation of the initial stage of InAs growth on GaAs substratesKITABAYASHI, H; WAHO, T.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 152-157, issn 0022-0248, 1Conference Paper

Blue luminescent SrGa₂S₄:Ce thin films grown by molecular beam epitaxyTANAKA, K; INOUE, Y; OKAMOTO, S et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 1211-1214, issn 0022-0248, 2Conference Paper

Characterization of termination layer of SiGe system through signatures of Si-O and Ge-O speciesPRABHAKARAN, K; OGINO, T.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 1020-1024, issn 0022-0248, 2Conference Paper

Effects of V/III supply ratio on improvement of crystal quality of zincblende GaN grown by gas source molecular beam epitaxy using RF-radical nitrogen sourceKIKUCHI, A; HOSHI, H; KISHINO, K et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 897-901, issn 0022-0248, 2Conference Paper

Gas source molecular beam epitaxy grown InGaAsP/InGaAlAs multi-quantum well structures with wide range continuum band-offset controlMAKITA, K; GOMYO, A; HINO, I et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 579-584, issn 0022-0248, 1Conference Paper

Gold growth on Si(111) √3×√3 Ag and √3×√3 Au surfacesICHIMIYA, A; NOMURA, H; ITO, Y et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 1169-1174, issn 0022-0248, 2Conference Paper

In-situ second-harmonic generation study of the molecular beam epitaxy growth of GaAsKIMURA, T; YAMADA, C.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 92-95, issn 0022-0248, 1Conference Paper

Luminescence of strained Si_1-xGe_x/Si quantum wells and microstructuresFUKATSU, S; SHIRAKI, Y.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 1025-1032, issn 0022-0248, 2Conference Paper

Molecular beam epitaxial growth and thermodynamic analysis of InGaAs and InAlAs lattice matched to InPMCELHINNEY, M; STANLEY, C. R.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 518-522, issn 0022-0248, 1Conference Paper